New Extraction Method for Intrinsic Qrr of Power MOSFETs
- Resource Type
- Conference
- Authors
- Hara, T.; Nakajima, S.; Ohguro, T.; Miyashita, K.
- Source
- 2023 35th International Conference on Microelectronic Test Structure (ICMTS) Microelectronic Test Structure (ICMTS), 2023 35th International Conference on. :1-4 Mar, 2023
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Inductance
MOSFET
Analytical models
Power measurement
Discharges (electric)
Time measurement
Microelectronics
Power MOSFET
Qrr
Qoss
Reverse Recovery
Diode
Parasitic Inductance
- Language
- ISSN
- 2158-1029
We provide the method to estimate intrinsic Q rr ($Q_{r_{-}\text{int}})$ without parasitic inductance in the measurement system for the first time. In this paper, we analyze parasitic inductance dependence of Q rr by TCAD simulation and we propose the method for removing the parasitic inductance effect as well as calculating the carrier of recombination and discharge (qr_into).