Simulational study for gate oxide breakdown mechanism due to non-uniform electron current flow
- Resource Type
- Conference
- Authors
- Kubota, M.; Harafuji, K.; Misaka, A.; Yamano, A.; Nakagawa, H.; Nomura, N.
- Source
- International Electron Devices Meeting 1991 [Technical Digest] Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International. :891-894 1991
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Electric breakdown
Plasma simulation
Plasma measurements
Analytical models
Plasma applications
Plasma materials processing
Etching
Dielectric breakdown
Breakdown voltage
MOS devices
- Language
- ISSN
- 0163-1918
A novel simulator for plasma processing has been developed and applied to analyze the gate oxide damage during parallel plate oxygen RIE (reactive ion etching) (13.56 MHz). The TDDB (time-dependent dielectric breakdown) and flat band voltage shift of a poly-silicon gate nMOS capacitor were experimentally measured. The results suggest a new mechanism where a large electron current flow near the wafer edge induces the damage.ETX