Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance
- Resource Type
- Conference
- Authors
- Morita, Y.; Mori, T.; Migita, S.; Mizubayashi, W.; Fukuda, K.; Matsukawa, T.; Endo, K.; O'uchi, S.; Liu, Y. X.; Masahara, M.; Ota, H.
- Source
- 2014 44th European Solid State Device Research Conference (ESSDERC) Solid State Device Research Conference (ESSDERC), 2014 44th European. :182-185 Sep, 2014
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Epitaxial growth
Silicon
Surface cleaning
CMOS integrated circuits
Logic gates
TFET
subthreshold slope
epitaxial growth
- Language
- ISSN
- 1930-8876
2378-6558
We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.