CMOS BEOL-embedded lateral accelerometer
- Resource Type
- Conference
- Authors
- Michalik, Piotr; Sanchez-Chiva, Josep M.; Fernandez, Daniel; Madrenas, Jordi
- Source
- 2015 IEEE SENSORS SENSORS, 2015 IEEE. :1-4 Nov, 2015
- Subject
- General Topics for Engineers
Micromechanical devices
Accelerometers
Etching
CMOS integrated circuits
Metals
Sensors
Resonant frequency
- Language
In this paper we present to the best of our knowledge a first ever reported CMOS BEOL-embedded lateral acceleration sensor obtained by simple isotropic inter-metal dielectric etching without any additional substrate etching steps. The device leverages the availability of thick metal and via layers of a 0.25 μm RF CMOS technology, featuring 7.36 kHz resonance frequency and differential capacitive sensitivity 0.2 fF/G. The accelerometer is monolithically integrated with on-chip sensing electronics exhibiting 200 μG/√Hz total noise floor at 2.5 V power supply and 550 μΑ current consumption.