Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors
- Resource Type
- Periodical
- Authors
- Walke, A.M.; Popovici, M.I.; Banerjee, K.; Clima, S.; Kumbhare, P.; Desmet, J.; Meersschaut, J.; Bosch, G.V.d.; Delhougne, R.; Kar, G.S.; Houdt, J.V.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(8):4744-4749 Aug, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Doping
Fatigue
Capacitors
Switches
Electrodes
Tin
Current measurement
Antiferroelectric like HZO
HZO metal–ferroelectric–metal (MFM) capacitors
La and Y doped HZO
wake-up
- Language
- ISSN
- 0018-9383
1557-9646
High endurance of 10 11 cycles is demonstrated in ~9–10-nm stoichiometric Hafnium Zirconate (HZO) metal–ferroelectric–metal (MFM) capacitors deposited using Cl precursors with La and Y dopants. La doping is shown to offer higher remnant polarization than Y. Investigation of doped layers with asymmetric polarization versus electric field ( ${P}$ – ${E}$ ) measurements and unipolar fatigue cycles suggests that in the pristine state, the HZO is comprised of ferroelectric domains with internal built-in electric field-induced pinned coercive field ( ${E}_{c}$ ). Doping is shown to increase the pinning effect and two distinct groups of ferroelectric domains emerge, which is antialigned at zero applied electric field ( ${E}$ ). The antiferroelectric-like (pinched ${P}$ – ${E}$ loop) behavior is therefore attributed to internal built-in ${E}$ -induced pinning of the domains during growth and/or annealing steps. The initial wake-up is attributed to gradual depinning of the domains with bipolar electric pulses. Suppression of monoclinic phase was observed in doped layers that survive 10 11 cycles. The wake-up is shown to be dependent on total duration and magnitude of bipolar electric pulses. Precycling scheme is demonstrated for stable operation at a lower field.