Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks
- Resource Type
- Conference
- Authors
- Max, Benjamin; Hoffmann, Michael; Slesazeck, Stefan; Mikolajick, Thomas
- Source
- 2018 48th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2018 48th European. :142-145 Sep, 2018
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
General Topics for Engineers
Power, Energy and Industry Applications
Tunneling
Aluminum oxide
Electrodes
Capacitors
Polarization
Current measurement
ferroelectric tunnel junction
Hf1-xZrxO2
memory
- Language
- ISSN
- 2378-6558
We report on a two-layer based ferroelectric tunnel junction with hafnium zirconium oxide (HZO) as the ferroelectric layer and aluminum oxide as the tunneling layer. The experimental results focus on optimizing the thicknesses of the layer stack. The device operation relies on the polarization reversal of the HZO layer, while electron tunneling occurs through the dielectric layer. The ferroelectric response of the HZO shows high remanent polarization values and good endurance with only weak wake-up and fatigue behavior. Adding the additional dielectric tunneling layer, the device becomes operational as a ferroelectric tunnel junction in the nanoampere current range. It shows good on/off ratios and promising retention behavior, paving the way for future applications as a polarization-based resistive memory device.