This paper reports the first high-performance acoustic filters toward millimeter wave (mmWave) bands using transferred single-crystal thin film lithium niobate (LiNbO 3 ). By transferring LiNbO 3 on the top of silicon (Si) and sapphire (Al 2 O 3 ) substrates with an intermediate amorphous Si (aSi) bonding and sacrificial layer, we demonstrate compact acoustic filters with record-breaking performance beyond 20 GHz. In the LN-aSi-Al 2 O 3 platform, the third-order ladder filter exhibits low insertion loss (IL) of 1.62 dB and 3-dB fractional bandwidth (FBW) of 19.8% at 22.1 GHz, while in the LN-aSi-Si platform, the filter shows low IL of 2.38 dB and FBW of 18.2% at 23.5 GHz. Material analysis validates the great crystalline quality of the stacks. The high-resolution x-ray diffraction (HRXRD) shows full width half maximum (FWHM) of 53" for Al 2 O 3 and 206" for Si, both remarkably low compared to piezoelectric thin films of similar thickness. The reported results bring the state-of-the-art (SoA) of compact acoustic filters to much higher frequencies, and highlight transferred LiNbO 3 as promising platforms for mmWave filters in future wireless front ends.