Re-think stress migration phenomenon with stress measurement in 12 years
- Resource Type
- Conference
- Authors
- Matsuyama, Hideya; Suzuki, Takashi; Nakamura, Tomoji; Shiozu, Motoki; Ehara, Hideo
- Source
- 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International. :307-310 May, 2015
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Stress measurement
Residual stresses
Copper
Acceleration
Finite element analysis
Nose
Resudial-stress
Stress Migration
Copper Interconnect
Stress Induced Voiding
Wide Pattern
Nose Pattern
- Language
- ISSN
- 2380-632X
2380-6338
We measured Internal residual stress change in the copper interconnect in 12 years to confirm the phenomenon that is occurred in acceleration test are equivalent with that is occurred in use condition or not. We have compared the stress change results and void feature and acceleration test results. With these results, we think same phenomenon (void generate on the surface of the interconnect) occur in the room temperature long time storage with high temperature storage. Also, we reviewed the FEM result of residual stress. There are not so large stress at the surface of the line. However void occurs on the surface especially for the Wide Pattern. That suggests diffusion path plays important role in acceralated and use condition.