Design Process of Optimal Dead-time for SiC MOSFET-Based Three-Phase Six-Switch Rectifier
- Resource Type
- Conference
- Authors
- Wang, Jizhe; Tezuka, Sho; Kajiwara, Kazuhiro; Segami, Akio; Matsui, Nobumasa; Kurokawa, Fujio
- Source
- 2021 10th International Conference on Renewable Energy Research and Application (ICRERA) Renewable Energy Research and Application (ICRERA), 2021 10th International Conference on. :381-384 Sep, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Renewable energy sources
Reactive power
Silicon carbide
Rectifiers
Capacitance
Harmonic analysis
Mathematical models
Dead-time
three-phase six-switch rectifier
total harmonic distortion
power factor
silicon carbide (SiC) MOSFET
parasitic capacitances
- Language
- ISSN
- 2572-6013
This paper proposed a design process of optimal dead-time for the SiC MOSFET-based three-phase six-switch rectifier. The optimal dead-time is calculated by considering the parasitic capacitances and utilizing the charge concept. Experimental results demonstrate that the input current THD and power factor are improved by optimizing the dead-time. The efficiency is tested as 96.7 % at a 10 kW SiC MOSFET-based three-phase six-switch rectifier.