Nano-XRF and micro-raman studies of metal impurity decoration around dislocations in multicrystalline silicon
- Resource Type
- Conference
- Authors
- Bertoni, M.I.; Sarau, G.; Fenning, D.P.; Rinio, M.; Rose, V.; Maser, J.; Buonassisi, T.
- Source
- 2012 38th IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE. :001613-001616 Jun, 2012
- Subject
- Photonics and Electrooptics
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon
Impurities
Stress
Radiative recombination
Photovoltaic cells
Metals
dislocations
silicon solar cells
X-ray fluorescence
micro-Raman
- Language
- ISSN
- 0160-8371
We push the resolution limits of synchrotron-based nano-X-ray fluorescence mapping below 100 nm to investigate the fundamental differences between benign and deleterious dislocations in multicystalline silicon solar cells. We observe that after processing recombination-active dislocations contain a high degree of nanoscale iron and copper decoration, while recombination-inactive dislocations appear clean. To study the origins of the distinct metal decorations around different dislocations we analyze as-grown samples as well as specimens at different stages of processing. We complement our X-ray studies with micro-Raman mapping to understand the relationship between metallic decoration and stress fields around dislocations.