A novel double gate tunnel field effect transistor with 9 mV/dec average subthreshold slope
- Resource Type
- Conference
- Authors
- Marjani, Saeid; Hosseini, Seyed Ebrahim
- Source
- 2014 22nd Iranian Conference on Electrical Engineering (ICEE) Electrical Engineering (ICEE), 2014 22nd Iranian Conference on. :399-402 May, 2014
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Tunneling
Logic gates
Field effect transistors
Electric fields
Temperature
Silicon
Band-to-band tunneling (BTBT)
ON-current
Average subthreshold slope (SSAVG)
DGTFET
- Language
- ISSN
- 2164-7054
In this paper, a novel double gate tunnel field effect transistor (DGTFET) configuration with p + -layer in the channel is proposed and investigated. The proposed structure is a Si-channel DGTFET, which has a p + -layer in the channel connected to the P + source region in order to achieve improved switching and higher ON-current when compared to a conventional TFET. The simulation results of DGTFET with p + -layer in the channel shows excellent characteristics with high I ON /I OFF ratio (about 5×10 12 ) and an average subthreshold slope of about 9 mV/decade over 4 decades of current at room temperature. Results suggest that, the DGTFET with p + -layer in the channel seem to be the most optimal ones to replace MOSFET for ultralow power applications and switching devices.