Strained silicon photonics for Pockels effect based modulation
- Resource Type
- Conference
- Authors
- Berciano, Mathias; Damas, Pedro; Marcaud, Guillaume; Le Roux, Xavier; Crozat, Paul; Ramos, Carlos Alonso; Benedikovic, Daniel; Marris-Morini, Delphine; Cassan, Eric; Vivien, Laurent
- Source
- 2017 IEEE 14th International Conference on Group IV Photonics (GFP) Group IV Photonics (GFP), 2017 IEEE 14th International Conference on. :57-58 Aug, 2017
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Silicon
Mach-Zehnder interferometers
Optical modulation
Electrooptical waveguides
Electrooptic effects
Pockels effect
silicon photonics
silicon-on-insulator
strained silicon
Mach-Zehnder interferometer
- Language
- ISSN
- 1949-209X
We present on experimental results of strain-induced Pockels effect in silicon based on Mach-Zehnder interferometer modulators. We theoretically studied both Pockels effect and carrier parasitic effect in silicon under an electric field. We demonstrated high speed Pockels-based optical modulation up to 25 GHz.