Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors
- Resource Type
- Conference
- Authors
- Schioppa, Enrico Junior; Bates, Richard; Buttar, Craig; Dalla, Marco; Van Hoorne, Jacobus Willem; Kugathasan, Thanushan; Maneuski, Dzmitry; Tobon, Cesar Augusto Marin; Musa, Luciano; Pernegger, Heinz; Riedler, Petra; Riegel, Christian; Sbarra, Carla; Schaefer, Douglas Michael; Sharma, Abhishek; Snoeys, Walter; Sanchez, Carlos Solans
- Source
- 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2017 17th European Conference on. :1-7 Oct, 2017
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Electrodes
Radiation effects
Detectors
Semiconductor device measurement
Standards
Charge measurement
Substrates
- Language
- ISSN
- 1609-0438
Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 10 15 n eq /cm 2 .