TID characterization of 0.13µm SONOS cell in 4Mb NOR flash memory
- Resource Type
- Conference
- Authors
- Qiao, Fengying; Yu, Xiao; Pan, Liyang; Ma, Haozhi; Wu, Dong; Xu, Jun
- Source
- 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the. :1-4 Jul, 2012
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
SONOS devices
Mathematical model
Flash memory
Electron traps
Degradation
Equations
- Language
- ISSN
- 1946-1542
1946-1550
In this paper, we investigate the TID response of 0.13µm SONOS cell with different charge states up to 2 Mrad(Si) and propose an improved model. Additionally, radiation experiment results show that I RD increase is the main reason for read error in the fabricated 4Mb flash memory chip.