A GaN-Based Unipolar Sinusoidal Pulse-Width Modulated Inverter with High Efficiency and High Power
- Resource Type
- Conference
- Authors
- Huang, Wei; Wang, Yang; Dong, Qingyang; Bo, Chunyue; Wu, Xiuhao; Luo, Weijun
- Source
- 2023 5th International Conference on Circuits and Systems (ICCS) Circuits and Systems (ICCS), 2023 5th International Conference on. :156-160 Oct, 2023
- Subject
- Components, Circuits, Devices and Systems
Photovoltaic systems
Total harmonic distortion
Switching frequency
Simulation
Modulation
Monolithic integrated circuits
Energy conversion
unipolar sinusoidal pulse-width modulated; inverter
DM GaN comparator
power stage;THD
- Language
This brief presents a high-power, high-efficiency GaN-based unipolar sinusoidal pulse-width modulated inverter. The comparator is the core of the inverter and the modulation process is dependent on the comparator. Designed depletion-mode (DM) GaN comparator exhibits excellent performances. On-chip experimental results show that the DM GaN comparator can operate up to 2 MHz with full waveform integrity and no distortion using 0.25μm GaN-on-Si process technology. The simulation results of the inverter based on the designed comparator are as follows: the inverter produces up to 16.9W of output power, 84% efficiency of power stage, 74% efficiency of the entire circuit and the total harmonic distortion rate (THD) is 0.75%. The proposed novel inverter implements sinusoidal pulse-width modulation in DC-AC conversion process.