Novel Design and Fabrication of Silicon Nanowire Array on (111) Soi
- Resource Type
- Conference
- Authors
- Lu, Zicheng; Wang, Yuelin; Li, Tie
- Source
- 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019 20th International Conference on. :1712-1715 Jun, 2019
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Silicon
Oxidation
Fabrication
Cavity resonators
Wet etching
Sensors
Suspended silicon nano wire
top-down
(111) silicon-on-insulator
- Language
- ISSN
- 2167-0021
We design and fabricate a novel Silicon NanoWire ( SiNW) array over the buried-oxide layer of (111) Silicon-On-Insulator (SOI) by using conventional microfabrication methods. Based on deep reactive ion etching (DRIE) and anisotropic wet etching, the help of horizontal control of silicon wall width and longitudinal control of top silicon thickness, the adjustment of nanowire size is improved. After thermal oxidation and release, the suspended nanowires located at the bottom of the cavity are more stable and robust than our previous reported SiNW array which is at the top of the cavity.