Experimental Evaluation of a Monolithic Gallium Nitride Devices Solution for Flyback Converter Devoted to Auxiliary Power Supply
- Resource Type
- Conference
- Authors
- Musumeci, S.; Barba, V.; Pastorelli, M.; Scrimizzi, F.; Cammarata, F.; Longo, G.; Rizzo, S.
- Source
- 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) Power Electronics and Applications (EPE'23 ECCE Europe), 2023 25th European Conference on. :1-8 Sep, 2023
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Robotics and Control Systems
Transportation
Performance evaluation
Low voltage
Buck converters
Power supplies
Switching frequency
Europe
High-voltage techniques
GaN FET
Flyback
Monolithic Device
System on Chip
- Language
The paper deals with an improved high-voltage smart monolithic Gallium Nitride (GaN) Field effect transistor (FET) as a power device integrated with a control circuit and gate driver with protection features. The high energy density and increased switching frequency of the GaN FETs, together with the low voltage control part, allow for the realisation of a DC-DC converter with a reduced size and high performance. In the paper, a Flyback converter based on the monolithic integrated power switch and signal circuits is described and experimentally evaluated to demonstrate the effectiveness of the proposed solution.