Total ionizing dose effects in high breakdown voltage SOI devices
- Resource Type
- Conference
- Authors
- Zhongjian Wang; Xinhong Cheng; Chao Xia; Dawei Xu; Lingyan Shen; Duo Cao; Li Zheng; Qian Wang; Yuehui Yu
- Source
- 2014 20th International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2014 20th International Conference on. :1-4 Jun, 2014
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Radiation effects
Logic gates
Threshold voltage
Implants
Silicon-on-insulator
Leakage currents
Silicon
SOI
LDMOS
LIGBT
Total ionizing dose (TID)
- Language
In this paper, 600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were fabricated. The dependence of the off-state breakdown voltage on the implant dose in the drift region and the on-state characteristics were measured. Total ionizing dose (TID) effects on LDMOS and LIGBT were studied experimentally. The threshold voltage shift and leakage current induced by 60 Co gamma irradiation under different dose and bias conditions were compared.