A 24-29 GHz GaN Power Amplifier for Monolithic Millimeter-wave RF Front-end
- Resource Type
- Conference
- Authors
- Lai, Jun-Kai; Chen, Zhi-Jian; Zou, Yu; Li, Bin; Lin, Xiao-Ling
- Source
- 2021 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Microwave and Millimeter Wave Technology (ICMMT),2021 International Conference on. :1-3 May, 2021
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Radio frequency
Broadband amplifiers
Power supplies
Power amplifiers
Microwave circuits
Circuit stability
Microwave amplifiers
GaN
single-side power supply
unconditionally steady
millimeter-wave RF front-end
- Language
A wideband 24-29 GHz gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit (MMIC) designed by 0.1μm GaN on Si process is presented in this paper. Broadband match and stability improvement techniques are combined to improve circuit performance. Under the condition of single-side power supply, this MMIC PA exhibits 34.7-35.2 dBm saturated output power with over 21dB power gain and 31-32.5% power added efficiency (PAE). The area of this PA is 3×1.4 mm 2 . This PA is unconditionally stable from 0 to 100 GHz and is suitable for monolithic millimeter-wave RF front-end chip applications.