High mobility metal oxide thin film transistors active-matrix organic light-emitting diode television
- Resource Type
- Conference
- Authors
- Shih, Tsung-Hsiang; Ting, Hung-Che; Chen, Chih-Lei; Tsai, Lun; Chen, Chia-Yu; Lin, Li-Fong; Lin, Hong-Shen; Chang, Lee-Hsun; Lin, Yu-Hsin
- Source
- 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on. :17-20 Jul, 2014
- Subject
- Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Robotics and Control Systems
TV
Thin film transistors
Active matrix organic light emitting diodes
Image color analysis
Plasmas
Stress
- Language
We reported large size amorphous Indium-Gallium-Zinc-Oxide and Indium-Tin-Zinc-Oxide thin film transistors active-matrix organic light-emitting diode television development history in AUO. The Gen6 threshold voltage uniformity can lower than 1.0V. Amorphous Indium-Tin-Zinc-Oxide thin film transistors show a higher mobility of 33.2 cm 2 /VS. Amorphous 56 inches back channel etch type Indium-Tin-Zinc-Oxide active-matrix organic light-emitting diode television is 1st time revealed. Metal-organic chemical vapor deposition system is used to evaluate the new high mobility material. The side-by-side organic light-emitting diode device is realized by fine metal mask. The dam and fill encapsulation method shows a simple process procedure and highly stability. Ink jet printing is adopted to produce a small size full color panel. By the application of compensation pixel circuit, the panel drove by AUO engine shows an excellent characteristic.