CMOS-Fabricated Ring Surface Ion Trap with TSV Integration
- Resource Type
- Conference
- Authors
- Zhao, Peng; Lim, Yu Dian; Li, Hongyu; Likforman, Jean-Pierre; Guidoni, Luca; Desormeaux, Lilay Gros; Tan, Chuan Seng
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Fabrication
Electron traps
Ions
Silicon
Through-silicon vias
Electrostatics
Surface treatment
- Language
- ISSN
- 2156-017X
We present the design, fabrication, and test of ring surface trap on 12-inch wafers with a CMOS process. The design is based on Through Silicon Vias (TSV) interconnects. Up to 200 ions were loaded and cooled; preliminary compensations of electrostatic potential imperfections show that rotational symmetry can be partially restored.