Resistive Switching of RF Sputtered Tin-dioxide (SnO2) Based Memristor for Non-volatile Memory
- Resource Type
- Conference
- Authors
- Bao, Guocheng; Liao, Wugang; Pang, Yudong; Wang, Xiongfeng; Chen, Xiaopei; Liu, Zhiquan; Zheng, Weiying; Guo, Zhenyi
- Source
- 2023 IEEE 6th International Conference on Electronics and Communication Engineering (ICECE) Electronics and Communication Engineering (ICECE), 2023 IEEE 6th International Conference on. :160-163 Dec, 2023
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Radio frequency
Electric potential
Power demand
Nonvolatile memory
Metallization
Memory management
Memristors
Resistive switching
non-volatile memory
memristor
SnO2
- Language
- ISSN
- 2831-431X
Memristor taking advantages of the reversible resistive switching (RS) behavior to store information shows great potential in future computing-in-memory and thus has attracted great attention. In this study, we proposed a Cu/SnO 2 /ITO structure based memristor which shows a typical bipolar resistive switching behavior. The resistive switching performances and mechanisms of SnO 2 memristor were systematically studied. 20 cycles of obvious memory window and small operating voltage of 0.9 V render it suitable for non-volatile memory. Electrochemical metallization (ECM) mechanism is found to be suitable for understanding the current conduction which shows an obvious formation and rupture of conductive filament.