A Novel RRAM-Based TCAM Search Array
- Resource Type
- Conference
- Authors
- Wang, Zhen; Li, Pengtao; Wang, Zijian; Xing, Shengpeng; Fan, Xuemeng; Zhang, Yishu
- Source
- 2024 Conference of Science and Technology for Integrated Circuits (CSTIC) Science and Technology for Integrated Circuits (CSTIC), 2024 Conference of. :1-3 Mar, 2024
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Semiconductor device modeling
Power demand
Microprocessors
Memristors
Voltage
CMOS process
Transistors
memristor
simulation
TCAM
array
2T2R
- Language
This work proposes a novel resistive random-access memory (RRAM)-based ternary content-addressable memory (TCAM) array architecture utilizing a Pt/Ta2O5/ZnO/Cu memristive device structure. A compact behavioral model for the memristor is developed based on experimental I-V characterization. A 2T2R cell design is presented leveraging the RRAM device as the storage element co-integrated with CMOS access transistors. An entire TCAM array is designed by arranging the 2T2R cells in a matrix structure. The content search operation is validated through circuit-level simulations using a commercial tool (Virtuoso). Compared to conventional CMOS-only implementations, this proposal offers advantages such as reduced layout area and static power consumption due to the non-volatility of resistive switching memory and is compatible with front-end CMOS processes. This work demonstrates the feasibility of utilizing RRAM devices to implement low-power TCAMs, paving the way for future energy-efficient in-memory search applications.