Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology
- Resource Type
- Conference
- Authors
- Pae, Sangwoo; Ashok, Ashwin; Jingyoo Choi; Ghani, Tahir; Jun He; Seok-hee Lee; Lemay, Karen; Liu, Mark; Lu, Ryan; Packan, Paul; Parker, Chris; Purser, Richard; St. Amour, Anthony; Woolery, Bruce
- Source
- 2010 IEEE International Reliability Physics Symposium Reliability Physics Symposium (IRPS), 2010 IEEE International. :287-292 May, 2010
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
High K dielectric materials
High-K gate dielectrics
Logic
MOS devices
Materials reliability
Silicon germanium
Germanium silicon alloys
Electric breakdown
Tunneling
Capacitive sensors
high-k dielectrics
metal-gate transistor
TDDB and BTI
process charging
Burn-in
- Language
- ISSN
- 1541-7026
1938-1891
High-K (HK) and Metal-Gate (MG) transistor reliability is very challenging both from the standpoint of introduction of new materials and requirement of higher field of operation for higher performance. In this paper, key and unique HK+MG intrinsic transistor reliability mechanisms observed on 32nm logic technology generation is presented. We'll present intrinsic reliability similar to or better than 45nm generation.