Blue photoluminescence emission from thermal SiO/sub 2/ films implanted with carbon
- Resource Type
- Conference
- Authors
- Yu, Y.H.; Lei, Y.M.; Wong, S.P.; Wilson, I.H.; Zou, S.C.
- Source
- 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 2:833-836 vol.2 1998
- Subject
- Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photoluminescence
Carbon dioxide
Temperature
Rapid thermal annealing
Argon
Ion implantation
Semiconductor films
Nanostructured materials
Nanoscale devices
Wavelength measurement
- Language
The structures formed after the implantation of carbon in thermal SiO/sub 2/ and annealing present visible photoluminescence (PL) bands at room temperature. The peak wavelength and intensity of PL bands depend strongly on the temperature of annealing. In contrast, only very weak PL bands are observed after the implantation of argon in thermal SiO/sub 2/ and similar annealing. IR, Raman, SIMS and HRTEM were also used to characterize the microstructure of the carbon or argon implanted thermal SiO/sub 2/ films. These observations show that carbon aggregates are probably the origin of blue PL bands.