A study of the low frequency noise (LFN) in reference injected Phase Locked Loops (PLL-RI)
- Resource Type
- Conference
- Authors
- Lei, Feiran; White, Marvin H.
- Source
- 2016 IEEE Dallas Circuits and Systems Conference (DCAS) Circuits and Systems Conference (DCAS), 2016 IEEE Dallas. :1-4 Oct, 2016
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Phase noise
Phase locked loops
Delays
Semiconductor device measurement
Baseband
Radio frequency
- Language
Noise generated in electronic devices greatly affects the performance of communication systems. In oscillators, device baseband noise is up-converted to the RF region as phase noise. This work studies important features of the injection locked Synchronous Oscillator (SO), with a focus on its phase noise performance. The SO is incorporated into a modified Phase-Locked Loop (PLL) as a Reference Injected PLL (PLL-RI) which provides improved locking behavior, suppressed low frequency phase noise, and coherency across the tracking range for a constant group delay. The relationship between device baseband noise and oscillators phase noise is developed and noise shaping functions are introduced to describe the suppression of phase noise in PLL-RIs. The analysis is verified by the PLL-RI fabricated in 130nm CMOS technology. Measurement results show the PLL-RI could successfully suppress the phase noise and jitter peaking: 3.1dB and 26dB noise reductions are observed at 1MHz and 10MHz offset from 1GHz carrier frequency respectively compared to the conventional PLL.