A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes
- Resource Type
- Conference
- Authors
- Seidel, Konrad; Lehninger, David; Abdulazhanov, Sukhrob; Sunbul, Ayse; Hoffmann, Raik; Zimmermann, Katrin; Yadav, Nandakishor; Le, Quang Huy; Landwehr, Matthias; Heinig, Andreas; Mahne, Hannes; Bernert, Kerstin; Thiem, Steffen; Kampfe, Thomas; Lederer, Maximilian
- Source
- 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Advanced Metallization Conference (MAM)(IITC/MAM), 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for. :1-3 May, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Varactors
Zirconium
Costs
Nonvolatile memory
Metallization
Ferroelectric films
Hafnium
ferroelectrics
non-volatile memory
varactor
back-end-of-line
- Language
- ISSN
- 2380-6338
In this paper we show the potential of further device functionalization in interconnect layers on established technologies by implementing innovative ferroelectric films based on CMOS-compatible hafnium zirconium oxide (HZO). Thus, offering new opportunities for advanced system on chip solutions with reduced integration complexity and low technology cost adder. Based on the example of implemented ferroelectric capacitors in the BEoL of XFAB’s XT018 technology we demonstrate on the same wafer the versatility of such ferroelectric capacitors for the application as memory bitcell and varactor device.