Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing
- Resource Type
- Conference
- Authors
- Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Jian-Jyun
- Source
- 2014 IEEE International Nanoelectronics Conference (INEC) Nanoelectronics Conference (INEC), 2014 IEEE International. :1-3 Jul, 2014
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Photovoltaic cells
Indium tin oxide
Silicon
Films
Leakage currents
Optical variables measurement
Voltage measurement
conversion efficiency
ITO electrode
MOS-structure solar cell
photovoltaic
voltage biasing
- Language
- ISSN
- 2159-3531
The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 µs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.