Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering
- Resource Type
- Periodical
- Authors
- Zhou, K.; Chang, T.; Yen, P.; Chen, Y.; Chien, Y.; Huang, B.; Lee, P.; Juan, T.; Sze, S.M.; Fan, Y.; Huang, C.; Tsai, C.
- Source
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(4):593-596 Apr, 2024
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Hydrogen
Thin film transistors
Plasmas
Logic gates
Stress
Doping
Temperature
IGZO TFTs
short-channel effect
hydrogen diffusion
N₂O plasma treatment
- Language
- ISSN
- 0741-3106
1558-0563
Previous studies have reported the formation of n+ regions in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) upon doping hydrogen (H) to the AOS channel layer from the deposition atmosphere of interlayer dielectrics (ILD) e.g. by hydrogenated plasma-enhanced chemical vapor deposition. In this work, we applied bottom-gate oxide engineering wherein N2O plasma treatment on a bottom-gate oxide suppresses the hydrogen diffusion to the amorphous IGZO (a-IGZO), thus minimizing the short-channel effect. The lateral hydrogen diffusion length can be remarkably reduced results show that the use of bottom-gate oxide engineering improved the reliability of the IGZO TFTs.