Measurement and Modeling of Picosecond Step Response of GaAs MESFETs
- Resource Type
- Conference
- Authors
- Law, Christine S.; Vendelin, George D.; van der Weide, Daniel W.
- Source
- 47th ARFTG Conference Digest ARFTG Conference Digest-Spring, 47th. 29:160-163 Jun, 1996
- Subject
- Fields, Waves and Electromagnetics
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Aerospace
Gallium arsenide
MESFETs
Transmission line measurements
Measurement techniques
Power system transients
Sampling methods
Current measurement
Time domain analysis
Application software
Oscilloscopes
- Language
The step response of a GaAs MESFET was measured using three techniques. The results were then compared with HP MDS using two nonlinear device models (EEFET3 and Statz-Pucel). Small and large signal TDT measurements give 15 - 50 ps switching times with a small bias dependence, increasing with drain current.