Evidence of quantum confined stark effect due to doping profile in InAsP/InP quantum well structures and its modification by ion bombardment
- Resource Type
- Conference
- Authors
- Landesman, Jean-Pierre; Jimenez, Juan; Levallois, Christophe; Pommereau, Frederic; Beck, Alexandre; Torres, Alfredo
- Source
- 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016. :1-1 Jun, 2016
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Power, Energy and Industry Applications
Doping
Ions
Stark effect
Compounds
Indium phosphide
III-V semiconductor materials
Charge carriers
- Language
We investigate the effects of the doping profile on the photo-luminescence (PL) and cathodo-luminescence (CL) of InAsP/InP quantum well (QW) structures grown on InP. A strong difference between the PL and CL of undoped and doped samples is observed. This is attributed to the quantum confined Stark effect (QSCE) and to the escape of photo-generated charge carriers out of the QWs by tunneling. These effects were probed by measuring the CL on biased samples. In addition, by exposing the samples to the ion flux in a plasma etching reactor (with a gas mixture containing chlorine), we observed for the doped sample a very strong change of the spectral shape of the PL. This change is discussed assuming that some ions penetrate the QW structure, thus compensating the initial electric field due to the doping profile.