GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements
- Resource Type
- Conference
- Authors
- LeClecH, Julien; Cassidy, Daniel T.; Biet, Michel; Laruelle, Francois; Bettiati, Mauro; Landesman, Jean-Pierre
- Source
- 2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on. :1-6 Apr, 2010
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Communication, Networking and Broadcast Technologies
Computing and Processing
Power, Energy and Industry Applications
Diode lasers
Bonding
Polarization
Photoluminescence
Stress measurement
Optical materials
Geometrical optics
Solid modeling
Residual stresses
Geometry
- Language
GaAs-based single-mode laser diode bonding-induced stress has been investigated by the means of both simulation and Degree of Polarization of photoluminescence (DoP) measurements. This has been done for different submount materials, and different geometries have been modeled in order to determine the impact of these parameters on the induced stress. The comparison of simulation results and DoP measurements shows the degree of accuracy of our model. From there, the impacts of the material and the geometry have been highlighted, and an explanation of the longitudinal variation of the residual mechanical stress is proposed.