A 400 to 500-MHz CMOS Power Amplifier with multi-Watt output
- Resource Type
- Conference
- Authors
- Jeongmin Jeon; Kuhn, William B.
- Source
- 2009 IEEE Radio and Wireless Symposium Radio and Wireless Symposium, 2009. RWS '09. IEEE. :272-275 Jan, 2009
- Subject
- Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Communication, Networking and Broadcast Technologies
Power amplifiers
Power generation
Impedance matching
Bonding
Radiofrequency amplifiers
CMOS process
Costs
Circuits
Power transformer insulation
Tiles
CMOS
UHF
PA
power amplifier
- Language
- ISSN
- 2164-2958
2164-2974
A two-stage P-band (400 MHz) CMOS multi-Watt Power Amplifier (PA) is reported. Four identical 1.25-Watt PA cells are power-combined to generate approximately 5-Watt output. The same PA chip is used for a drive-amplifier, providing a total of 17 dB power gain. In the measurements, the two-stage five-chip PA produces 5.1-Watt with 17 % PAE. The five-chip PA assembly will be merged into a 7×10 mm 2 single die amplifier in a future project.