GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate
- Resource Type
- Periodical
- Authors
- Raj, A.; Krishna, A.; Romanczyk, B.; Hatui, N.; Liu, W.; Keller, S.; Mishra, U.K.
- Source
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 44(1):9-12 Jan, 2023
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Logic gates
FinFETs
Metals
Two dimensional hole gas
Fabrication
Superlattices
Epitaxial growth
Normally-off
pFET
superlattice
schottky
FinFET
GaN
- Language
- ISSN
- 0741-3106
1558-0563
In this work, we report on a GaN/AlGaN superlattice based normally-off hole channel FinFET devices. A combination of Schottky gate and 60 nm wide fins led to enhancement mode operation. The device had an on-current of 13 mA/mm and an on-resistance of $300~\Omega $ .mm. simultaneously, a large Ion/Ioff > 107 and a current modulation of more than two orders of magnitude in the enhancement mode regime was also achieved.