Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
- Resource Type
- Periodical
- Authors
- Gong, H.; Ni, K.; Zhang, E.X.; Sternberg, A.L.; Kozub, J.A.; Alles, M.L.; Reed, R.A.; Fleetwood, D.M.; Schrimpf, R.D.; Waldron, N.; Kunert, B.; Linten, D.
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(1):376-383 Jan, 2019
- Subject
- Nuclear Engineering
Bioengineering
Silicon
Substrates
FinFETs
Indium gallium arsenide
Transient analysis
Logic gates
III-V semiconductor materials
Bipolar amplification
bulk silicon
charge collection
GaAs
InGaAs
lifetime
pulsed laser
single-event transient (SET)
technology computer-aided design (TCAD)
- Language
- ISSN
- 0018-9499
1558-1578
The pulsed-laser single-event transient response of InGaAs FinFETs on bulk silicon substrates is investigated. Charge collection due to a source–drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substrate devices is compared to that of InGaAs FinFETs on semi-insulating substrates. Faster transients with reduced peak currents and peak widths are observed on the silicon substrate devices. Simulations show hole collection by the silicon substrate. This reduces the amount of source-barrier lowering and bipolar-amplification relative to other III–V devices. Moreover, the reduced hole lifetime in the GaAs buffer layer also contributes to the relative reduction of the bipolar amplification in these devices.