Helium ion microscope characterization for Cu / low-k interconnects - SE imaging and focused helium ion beam luminescence detection -
- Resource Type
- Conference
- Authors
- Ogawa, Shinichi; Iijima, Tomohiko; Awata, Shogo; Kakinuma, Shigeru; Komatani, Shintaro; Kanayama, Toshihiko
- Source
- 2011 IEEE International Interconnect Technology Conference Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International. :1-3 May, 2011
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Copper
Dielectrics
Helium
Imaging
Luminescence
Ion beams
- Language
- ISSN
- 2380-632X
2380-6338
Several novel imaging modes of the recently developed helium ion microscope (HIM) 1) were explored that may make the HIM a tool of particular value to Cu / low-k (dielectric constant) interconnect structures. Mechanism of the “through dielectric” (2) imaging of the Cu interconnects underneath the low-k SiOC film was proposed, and materials contrast in the low-k regions between Cu lines was imaged which might reflect damaged low-k areas. Furthermore possibility of detection of luminescence induced by the focused helium ion beam using the HIM for materials property characterizations was studied for the first time.