Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon
- Resource Type
- Conference
- Authors
- Nanver, L. K.; Liu, X.; Knezevic, T.
- Source
- 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) Microelectronic Test Structures (ICMTS), 2018 IEEE International Conference on. :69-74 Mar, 2018
- Subject
- Components, Circuits, Devices and Systems
Silicon
Substrates
Doping
Temperature measurement
Electrical resistance measurement
Pollution measurement
Surface treatment
aluminum
atomic layer deposition
boron
chemical vapor deposition
electron injection
interface charge
- Language
- ISSN
- 1071-9032
2158-1029
A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm-thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.