Optical phonon instability caused by ultra-high-speed electron transport in nanoscale samples
- Resource Type
- Conference
- Authors
- Kochelap, V.A.; Klimov, A.A.; Korotyeyev, V.V.; Kim, K.W.
- Source
- 2008 4th International Conference on Advanced Optoelectronics and Lasers Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on. :264-266 Sep, 2008
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Communication, Networking and Broadcast Technologies
Electron optics
Phonons
Frequency
High speed optical techniques
Optical pumping
Semiconductor diodes
Poisson equations
Permittivity
Physics
Electromagnetic radiation
Ballistic diodes
optical phonons
THz instability
- Language
- ISSN
- 2160-1518
2160-1534
We investigated ultra-high frequency electrical properties of nanoscale n+-i-n+ diodes made of polar semiconductors. We found the optical vibrations instability and the large effect of the negative dynamic resistance. These effects indicate that the nanoscale diodes are capable of generating electromagnetic radiation in the 10 THz range.