Novel RTA technique for large diameter GaAs wafers managing to minimize both dopant diffusion and slip formation
- Resource Type
- Conference
- Authors
- Sakurada, T.; Kiyama, M.; Nakajima, S.; Tatsumi, M.
- Source
- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Indium phosphide and related materials Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On. :425-427 2001
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Gallium arsenide
Rapid thermal processing
Thermal stresses
Cooling
Rapid thermal annealing
Fabrication
Temperature measurement
Temperature sensors
Temperature distribution
Doping profiles
- Language
- ISSN
- 1092-8669
Rapid thermal annealing (RTA) is useful for shallow channel device fabrication because of suppression of dopant diffusion. However, short RTA sequence easily causes slip formation due to thermal stress during the process, which is more serious in the case of larger diameter wafers. We investigated at what point slip generated during RTA by monitoring temperature distribution within a wafer and successfully suppress slip formation by introducing a waiting step in the cooling process while maintaining the high cooling rate and the abrupt doping profile.