Vth control in GaAs by substrate parameters
- Resource Type
- Conference
- Authors
- Kaminaka, K.; Morishita, H.; Kiyama, M.; Kawasaki, A.; Yokogawa, M.; Fujita, K.; Akai, S.
- Source
- Proceedings of the 7th Conference on Semi-insulating III-V Materials, Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on. :307-312 1992
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Gallium arsenide
Substrates
Conductivity
Ion implantation
Insulation
FETs
III-V semiconductor materials
Vibration measurement
Absorption
Industrial control
- Language
We have investigated the variation of threshold voltage (Vth) with regard to the resistivity (p) of the semi-insulating substrate, and have found that there is a good correlation between p and Vth. It has previously been reported that the uniformity of Vth (/spl sigma/Vth) has a relation to the uniformity of microscopic resistivity (/spl sigma/p/p) of the semi-insulating substrate. We have studied a correlation between /spl sigma/p/p and the Hall mobility of the semi-insulating substrate (/spl mu//sub H/). It has been found that a substrate with a higher /spl mu//sub H/ can produce better /spl sigma/Vth. These results suggest that the Vth can be controlled by substrate parameters such as resistivity and mobility.