High efficiency microwave power amplifier based on AlGaN/GaN
- Resource Type
- Conference
- Authors
- Kirillov, Vitaliy; Turalchuk, Pavel
- Source
- 2017 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Young Researchers in Electrical and Electronic Engineering (EIConRus), 2017 IEEE Conference of Russian. :306-308 2017
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Power amplifiers
Harmonic analysis
Power system harmonics
Microwave amplifiers
Microwave transistors
HEMTs
power amplifier
efficiency
harmonic load-pull
- Language
In the paper, a design procedure for synthesis of microwave power amplifiers based on a AlGaN/GaN technology is discussed. The paper is focused on the design of harmonic impedance matching network in order to increase power amplifier efficiency. As a result, the power amplifier based on AlGaN/GaN heterojunction HEMT transistor with 0.25×125 μm gate capable for 30 W output power operation and providing 34 % power added efficiency at 9 GHz has been designed, fabricated and measured.