Undercut Compensation for Xenon Difluoride Etching of Polysilicon Thin-films
- Resource Type
- Conference
- Authors
- Jeon, Jaeseok; Ma, Abdul Haseeb; Khosraviani, Kourosh; Leung, Albert M.
- Source
- 2007 Canadian Conference on Electrical and Computer Engineering Electrical and Computer Engineering, 2007. CCECE 2007. Canadian Conference on. :963-965 Apr, 2007
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Robotics and Control Systems
Xenon
Thin films
Silicon
Resists
Microstructure
Valves
Dry etching
Protection
Optical buffering
Micromechanical devices
- Language
- ISSN
- 0840-7789
This paper presents a new undercut compensation etch technique that provides better control over lateral undercutting of polysilicon thin-films using xenon difluoride (XeF 2 ) vapour as the etchant. A significant reduction in the lateral undercutting of polysilicon thin-films was achieved by placing silicon etch buffers beside polysilicon etch samples during the XeF 2 etch process. This technique extends XeF 2 's etching capability to include fine geometry patterning of polysilicon films to be used as MEMS structural layers.