Multi-CNTFETs for power device applications: Investigation of CCVD grown CNTs by means of atomic force microscopy
- Resource Type
- Conference
- Authors
- Keyn, Martin; Schwalke, Udo
- Source
- 2013 8th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on. :1-5 Mar, 2013
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Nickel
Carbon nanotubes
Plasmas
Annealing
Fabrication
Surface treatment
Silicon
atomic force microscopy
carbon nanotubes
carbon nanotube field-effect transistor
catalytic chemical vapor deposition
power device application
- Language
In this work we use atomic force microscopy to explore carbon nanotubes (CNTs) which are grown by means of catalytic chemical vapor deposition (CCVD). The used process can be utilized to fabricate hundreds of carbon nanotube field-effect transistors (CNTFETs) for logic as well as for power device applications. The application type is selected through specially patterned source/drain contacts which either allow only one linking CNT (logic applications) or provide large scale parallelization of numerous CNTs (“multi-CNTFET”) for power device applications.