Nanoelectronics: From silicon to graphene
- Resource Type
- Conference
- Authors
- Schwalke, Udo; Wessely, Juliane; Wessely, Frank; Keyn, Martin; Rispal, Lorraine
- Source
- 7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2012 7th International Conference on. :1-3 May, 2012
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Communication, Networking and Broadcast Technologies
General Topics for Engineers
CNTFETs
Carbon nanotubes
Carbon
Nanoscale devices
Silicon
Fabrication
- Language
In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.