The Effect of Buffer Layer Location on LIGBT
- Resource Type
- Conference
- Authors
- Chang, Y. S.; Kao, L. C.; Gong, J.
- Source
- 2017 International Conference on Information, Communication and Engineering (ICICE) Information, Communication and Engineering (ICICE), 2017 International Conference on. :16-19 Nov, 2017
- Subject
- Communication, Networking and Broadcast Technologies
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Equivalent circuits
Insulated gate bipolar transistors
Micrometers
Temperature
Current density
Conferences
Epitaxial layers
LIGBT
High Temperature
Equivalent Circuit
- Language
The N-buffer layer location of an N-LIGBT was adjusted, and the device characteristics were analyzed. The parameters of the device equivalent circuit were extracted to find the reason of the device improvement. Different parameter extraction methods were compared, it was found that the equipotential line method is the most accurate one.