Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories” [2021 774-777]
- Resource Type
- Periodical
- Authors
- Lee, J.G.; Jung, W.J.; Park, J.H.; Yoo, K.; Kim, T.W.
- Source
- IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:813-813 2021
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Flash memories
Integrated circuit modeling
Three-dimensional integrated circuits
- Language
- ISSN
- 2168-6734
In [1], the following sentence on p. 774, second column, is revised as follows.