Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor
- Resource Type
- Conference
- Authors
- Roberts, D.; Johnstone, W.; Sanchez, H.; Mandhana, O.; Spilo, D.; Hayden, J.; Travis, E.; Melnick, B.; Celik, M.; Byoung Woon Min; Edgerton, J.; Raymond, M.; Luckowski, E.; Happ, C.; Martinez, A.; Wilson, B.; Pak Leung; Garnett, T.; Goedeke, D.; Remmel, T.; Ramakrishna, K.; White, B.E., Jr.
- Source
- IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :72-75 2005
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
MIM capacitors
Microprocessors
Capacitance
Copper
Power grids
Metal-insulator structures
Voltage
Leakage current
System performance
System-on-a-chip
- Language
- ISSN
- 0163-1918
2156-017X
A reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology. The reduction of supply grid voltage transients has enhanced microprocessor performance by approximately 10% without increasing the chip area or power consumption