Method for predicting f/sub T/ for carbon nanotube FETs
- Resource Type
- Periodical
- Authors
- Castro, L.C.; John, D.L.; Pulfrey, D.L.; Pourfath, M.; Gehring, A.; Kosina, H.
- Source
- IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 4(6):699-704 Nov, 2005
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Voltage
FETs
Capacitance
Equivalent circuits
Transconductance
Frequency
MOSFETs
Computational modeling
Circuit simulation
Microelectronics
Carbon nanotube transistors
field-effect transistors (FETs)
nanotechnology
quantum effect semiconductor devices
quantum wires
semiconductor device modeling
small-signal analysis
- Language
- ISSN
- 1536-125X
1941-0085
A method based on a generic small-signal equivalent circuit for field-effect transistors is proposed for predicting the unity-current-gain frequency f/sub T/ for carbon-nanotube devices. The key to the useful implementation of the method is the rigorous estimation of the values for the components of the equivalent circuit. This is achieved by numerical differentiation of the charges and currents resulting from self-consistent solutions to the equations of Schrodinger and Poisson. Sample results are presented, which show that f/sub T/ can have a very unusual dependence on the gate-source bias voltage. This behavior is due mainly to the voltage dependence of the transconductance and capacitance in the presence of quasi-bound states in the nanotube.