Development of SiGe/Si HBT
- Resource Type
- Conference
- Authors
- Guangdi Shen; Chen Xu; Jianxin Chen; Deshu Zou; Chen Shi; Jun Deng; Jingyu Du; Guo Gao
- Source
- 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Solid-state and integrated circuit technology Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on. 1:580-585 vol.1 2001
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon germanium
Germanium silicon alloys
Heterojunction bipolar transistors
III-V semiconductor materials
CMOS technology
Costs
Radio frequency
Doping
Microwave transistors
FET integrated circuits
- Language
The development of SiGe/Si HBT in the world is briefly reviewed and our recent research progress in high frequency SiGe/Si HBT is reported. A novel modulation doped quantum well base SiGe/Si HBT is proposed and fabricated. This new structure can reduce the base resistance effectively without increasing the average doping level in base. SiGe/Si HBT with /spl beta/ac over 24000 at 77 K was designed and fabricated. The effects of parasitic barrier induced by boron segregation and outdiffusion in the base were carefully studied, and reasonable width of i-SiGe spacers to prevent these phenomena was obtained by experiment and simulation. The nonideal current of Ib and Ic and their effects on the performance of the device were investigated.