A High-Quality-Factor Aluminum Nitride Resonator with Silicon Dioxide Composite Structure
- Resource Type
- Conference
- Authors
- Ma, Chen; Jiang, Jiewei; Chen, Jianlin; Ren, Qinghua; Zhang, Qiaozhen; Wang, Nan
- Source
- 2023 IEEE International Ultrasonics Symposium (IUS) Ultrasonics Symposium (IUS), 2023 IEEE International. :1-4 Sep, 2023
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Silicon compounds
Q-factor
Transducers
Power demand
Simulation
Resonant frequency
III-V semiconductor materials
aluminum nitride resonators
Lamb wave modes
quality factor
spurious modes elimination
- Language
- ISSN
- 1948-5727
A high-quality-factor composite structure resonator is presented, which consists of a silicon dioxide (SiO 2 ) composite structure driven by an aluminum nitride (AlN) transducer positioned underneath. With the kinetic energy primarily concentrated in the upper SiO 2 composite layer, the series quality factor (Q s ) of this resonator is significantly enhanced. The spurious modes are effectively eliminated by modifying the composite layer into split rods-shaped structure. A simulated series quality factor of 3110 is achieved at 1.45 GHz, with a spurious-free frequency spectrum spanning over a range of more than 1.4 GHz. This resonator holds great potential for high-precision oscillator applications.